3SK299-A
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3SK299-A datasheet
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Маркировка3SK299-A
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ПроизводительRenesas Electronics
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ОписаниеRenesas Electronics 3SK299-A Mfr Package Description: PLASTIC, SO-4 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: TIN BISMUTH Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: GALLIUM ARSENIDE Power Dissipation Ambient-Max: 0.1200 W Channel Type: N-CHANNEL FET Technology: METAL SEMICONDUCTOR Operating Mode: DUAL GATE, DEPLETION Transistor Type: RF SMALL SIGNAL Power Gain-Min (Gp): 16 dB Drain Current-Max (ID): 0.0400 A Highest Frequency Band: ULTRA HIGH FREQUENCY BAND Feedback Cap-Max (Crss): 0.0300 pF
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Количество страниц6 шт.
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Форматы файлаHTML, PDF
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